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Shifting the Balance of Power
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Shifting the Balance of Power
飞思卡尔的低功耗技术，推动®Kinetis ARM皮质™- M4 MCU。
嵌入式市场对功耗低的性能的需求越来越大，现在已经扩展到便携式和墙壁供电的应用范围。为了满足这一需求，飞思卡尔继续推动低功耗设计的边界。最新的受益人是其新的Kinetis微控制器ARM Cortex-M4线。在2010第四季度采样，Kinetis是第一个广泛的市场的混合信号单片机组合基础上的新的ARM Cortex-M4内核的工业中最可扩展的ARM Cortex-M4 MCU组合之一。多个硬件和软件兼容的单片机的家庭将提供卓越的性能，内存和功能可扩展性从50 MHz，超小型QFN封装32 KB的闪存设备，高达150 MHz的设备与闪存和丰富的工业集中周边集1 MB。低功耗的Kinetis MCU的设计中发挥了核心作用。这反映在新的飞思卡尔90 nm分栅薄膜存储器的使用（sg-tfs）工艺技术，并在广泛的通用和专用外设，来包装与省电功能。
Innovative low-power process technology
Process technology is the basic building block of any semiconductor product and a key factor in determining an MCU‘s power consumption. Kinetis MCUs are the first to take advantage of Freescale’s SG-TFS flash technology which， in addition to offering extremely fast access times and high immunity to charge loss， has been specifically designed to address the needs of power-sensitive applications. In designing the SG-TFS bit cell， Freescale has utilized fast， low voltage transistors in the read path resulting in a lower operating voltage range of 1.71 V to 3.6 V. In applications that utilize two 1.5 V batteries， cell life deteriorates rapidly once the 0.9 V level is reached. This means that the 1.71 V lower voltage limit translates into extended battery life versus traditional MCUs that are typically limited to 2 V or above. This extended voltage range applies not only to the on-chip memories — flash， SRAM and Freescale‘s new FlexMemory （configurable， high endurance EEPROM） — but also to the analog peripherals， thereby allowing continual signal measuring and conditioning even at the lower end of the power curve. The voltage characteristics of TFS also contribute to reduced run currents by allowing signals that are switched at high speed to operate at lower voltages （typically 1.2 V）。 Because run current is proportional to C*V^2*f， the reduction in V is very beneficial to the flash component of the active current.
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