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NCP5210 pdf datasheet (3-in-1
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大小:555 |
2008-10-22
131594
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NCP5210 3-in-1 PWM Dual Buck and Linear DDR Power Controller
The NCP5210, 3−in−1 PWM Dual Buck and Linear DDR Power
Controller, is a complete power solution for MCH and DDR memory.
This IC combines the efficiency of PWM controllers for the VDDQ
supply and the MCH core supply voltage with the simplicity of linear
regulator for the VTT termination voltage.
This IC contains two synchronous PWM buck controller for driving
four external N−Ch FETs to form the DDR memory supply voltage
(VDDQ) and the MCH regulator. The DDR memory termination
regulator (VTT) is designed to track at the half of the reference voltage
with sourcing and sinking current.
Protective features include, soft−start circuitry, undervoltage
monitoring of 5VDUAL and BOOT voltage, and thermal shutdown.
The device is housed in a thermal enhanced space−saving
QFN−20 package.
Features
• Incorporates Synchronous PWM Buck Controllers for VDDQ and
VMCH
• Integrated Power FETs with VTT Regulator Source/Sink up to 2.0 A
• All External Power MOSFETs are N−Channel
• Adjustable VDDQ and VMCH by External Dividers
• VTT Tracks at Half the Reference Voltage
• Fixed Switching Frequency of 250 kHz for VDDQ and VMCH
• Doubled Switching Frequency of 500 kHz for VDDQ Controller in
Standby Mode to Optimize Inductor Current Ripple and Efficiency
• Soft−Start Protection for all Controllers
• Undervoltage Monitor of Supply Voltages
• Overcurrent Protections for DDQ and VTT Regulators
• Fully Complies with ACPI Power Sequencing Specifications
• Short Circuit Protection Prevents Damage to Power Supply Due
to Reverse DIMM Insertion
• Thermal Shutdown
• 5x6 QFN−20 Package
• Pb−Free Package is Available*
Applications
• DDR I and DDR II Memory and MCH Power Supply
The NCP5210, 3−in−1 PWM Dual Buck and Linear DDR Power
Controller, is a complete power solution for MCH and DDR memory.
This IC combines the efficiency of PWM controllers for the VDDQ
supply and the MCH core supply voltage with the simplicity of linear
regulator for the VTT termination voltage.
This IC contains two synchronous PWM buck controller for driving
four external N−Ch FETs to form the DDR memory supply voltage
(VDDQ) and the MCH regulator. The DDR memory termination
regulator (VTT) is designed to track at the half of the reference voltage
with sourcing and sinking current.
Protective features include, soft−start circuitry, undervoltage
monitoring of 5VDUAL and BOOT voltage, and thermal shutdown.
The device is housed in a thermal enhanced space−saving
QFN−20 package.
Features
• Incorporates Synchronous PWM Buck Controllers for VDDQ and
VMCH
• Integrated Power FETs with VTT Regulator Source/Sink up to 2.0 A
• All External Power MOSFETs are N−Channel
• Adjustable VDDQ and VMCH by External Dividers
• VTT Tracks at Half the Reference Voltage
• Fixed Switching Frequency of 250 kHz for VDDQ and VMCH
• Doubled Switching Frequency of 500 kHz for VDDQ Controller in
Standby Mode to Optimize Inductor Current Ripple and Efficiency
• Soft−Start Protection for all Controllers
• Undervoltage Monitor of Supply Voltages
• Overcurrent Protections for DDQ and VTT Regulators
• Fully Complies with ACPI Power Sequencing Specifications
• Short Circuit Protection Prevents Damage to Power Supply Due
to Reverse DIMM Insertion
• Thermal Shutdown
• 5x6 QFN−20 Package
• Pb−Free Package is Available*
Applications
• DDR I and DDR II Memory and MCH Power Supply
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