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SN74CB3T1G125,pdf(SINGLE FET B

消耗积分:2 | 格式:rar | 大小:416 | 2010-08-16

王强

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特性

  • Output Voltage Translation Tracks VCC
  • Supports Mixed-Mode Signal Operation on All Data I/O Ports
    • 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
    • 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
  • 5-V-Tolerant I/Os, With Device Powered Up or Powered Down
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 5 Typ)
  • Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 5 pF Typ)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 20 µA Max)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
  • Ideal for Low-Power Portable Equipment

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