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塑料薄膜衬底上复合敏感膜热释电传感器的制备
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2009-07-09
石玉兰
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将So l2Gel 法制备的掺钙钛酸镧铅纳米粉粒(PCL T) 与聚偏氟乙烯2三氟乙烯(P (VDF2T rFE) 均匀复合, 作为热释电传感器的敏感膜, 比同样制备条件的纯聚偏氟乙烯2三氟乙烯膜的探测优值高约2214%。并以沉积有35 nm ITO 薄膜的廉价PET 塑料为衬底, 用旋转涂膜法沉积PCL TöP (VDF2T rFE) 复合敏感膜, 用N i2Cr 薄膜作上电极, 制备了PCL TöP (VDF2T rFE)öP ET 热释电传感器。PET 塑料可有效降低热释电元件的热导, 下电极ITO 可反射红外辐射, 明显提高了传感器的电压响应和降低热释电元件的热噪声。测试结果表明, PCL TöP (VDF2T rFE)öPET 热释电传感器的探测率达到314×107cmHz1ö2 W - 1, 比同样制备条件的体硅衬底传感器高2 个数量级以上。
关键词: 热释电传感器; 塑料薄膜衬底; 复合敏感膜; PCL TöP (VDF2T rFE)
Abstract:N ano sized lead t itanate doped w ith calcium and lanthanum (PCL T) pow der obtained by the So l2Gel method w as homogeneouslym ixed w ith vinylidene fluo ride2t rifluo roethylene [P (VDF2T rFE) ]. The nanocompo site PCL TöP (VDF2T rFE) film w as used as the sensing film of pyro lect ric senso rs,w ho se detect ive merit w as about 22. 4% h igher than that of senso rs using pure P (VDF2T rFE). 35 nm ITO film w as depo sited as bo t tom elect rode on PET p last ic film subst rate, on w h ich PCL TöP (VDF2T rFE)w as p repared by sp in2coat ing, and N i2Cr film w as cho sen as upper elect rode. PET p last ic film subst rate could effect ively decrease the thermal conduct ivity of the ele2 ment and ITO bo t tom elect rode could reflect the infrared irradiat ion. The vo ltage responsivity w as increased and
the thermal fluctuat ion no ise of the pyroelect ric element w as decreased significant ly. The experimental results indi2 cated the specific detect ivity of PCL TöP (VDF2T rFE) pyroelect ric senso rs based on PET film subst rate reached 314×107 cmHz1ö2 W - 1,mo re 2 o rders ofmagnitude h igher than that of the senso rs on bulk silicon subst rate fo rmed under the same condit ions.
Key words: pyroelect ric senso r; p last ic film subst rate; compo site film; PCL TöP (VDF2T rFE)
关键词: 热释电传感器; 塑料薄膜衬底; 复合敏感膜; PCL TöP (VDF2T rFE)
Abstract:N ano sized lead t itanate doped w ith calcium and lanthanum (PCL T) pow der obtained by the So l2Gel method w as homogeneouslym ixed w ith vinylidene fluo ride2t rifluo roethylene [P (VDF2T rFE) ]. The nanocompo site PCL TöP (VDF2T rFE) film w as used as the sensing film of pyro lect ric senso rs,w ho se detect ive merit w as about 22. 4% h igher than that of senso rs using pure P (VDF2T rFE). 35 nm ITO film w as depo sited as bo t tom elect rode on PET p last ic film subst rate, on w h ich PCL TöP (VDF2T rFE)w as p repared by sp in2coat ing, and N i2Cr film w as cho sen as upper elect rode. PET p last ic film subst rate could effect ively decrease the thermal conduct ivity of the ele2 ment and ITO bo t tom elect rode could reflect the infrared irradiat ion. The vo ltage responsivity w as increased and
the thermal fluctuat ion no ise of the pyroelect ric element w as decreased significant ly. The experimental results indi2 cated the specific detect ivity of PCL TöP (VDF2T rFE) pyroelect ric senso rs based on PET film subst rate reached 314×107 cmHz1ö2 W - 1,mo re 2 o rders ofmagnitude h igher than that of the senso rs on bulk silicon subst rate fo rmed under the same condit ions.
Key words: pyroelect ric senso r; p last ic film subst rate; compo site film; PCL TöP (VDF2T rFE)
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