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WSD2010DN25 N+N DFN2X5-6 20V11A
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2017-07-28
林小辉
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WSD2010DN25 N+N DFN2X5-6 20V11A
General Description
The WSD2010DN25 is the highest performance trench N-ch MOSFETs with extreme high cell density ， which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSD2010DN25 meet the RoHS and Green Product requirement with full function reliability approved.
Features
Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
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