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Scanning Microwave Microscopy
消耗积分:2 |
格式:rar |
大小:302 |
2010-08-09
刘伟
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Features and Benefits
• Provides exceptionally high spatial
and electrical resolution
• Offers highest sensitivity and
dynamic range in the industry
• Enables complex impedance
(resistance and reactance),
calibrated capacitance, calibrated
dopant density, and topography
measurements
• Works on all semiconductors: Si,
Ge, III-V (e.g., GaAs, InAs, GaN),
and II-VI (e.g., CdTe, ZnSe)
• Operates at multiple frequencies
(variable up to 6 GHz)
• Does not require an oxide layer
• Provides exceptionally high spatial
and electrical resolution
• Offers highest sensitivity and
dynamic range in the industry
• Enables complex impedance
(resistance and reactance),
calibrated capacitance, calibrated
dopant density, and topography
measurements
• Works on all semiconductors: Si,
Ge, III-V (e.g., GaAs, InAs, GaN),
and II-VI (e.g., CdTe, ZnSe)
• Operates at multiple frequencies
(variable up to 6 GHz)
• Does not require an oxide layer
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