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SN74CB3Q3345,pdf(8-BIT FET BUS

消耗积分:3 | 格式:rar | 大小:630 | 2010-08-16

h1654155275.3132

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特性

  • High-Bandwidth Data Path (up to 500 MHz)(1)
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range
    (ron = 4 Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typ)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.7 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

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