该文针对逆变电源向大功率发展时受单管IGBT(绝缘门极双极型晶体管) 电流容量限制的问题,受MOSFET(电力场效应晶体管) 并联扩流成功应用的启发,提出采用多IGBT的并联技术,解决进一步提高逆变电源容量的难题。在分析IGBT工作机理基础上,给出了电路拓扑及其工作原理,并对并联器件产生的均流问题进行了重点分析,提出了相应的解决方法,
推荐了IGBT并联应用的厚膜集成驱动电路。通过理论分析和计算机仿真结果表明:在大容量逆变电源中采用IGBT并联技术是有效可行的,它可以显著增加整机的电流容量,提高电源的有效功率。
关键词:绝缘门极双极型晶体管; 并联; 逆变电源; 仿真
ABSTRACT:When inverter power is developed as a large output power, it is usually limited by the electric current capacity of a single IGBT( Insulated Gate B ipolar Transistor). Illuminated by the success ofMOSFETs
app lied in parallel, this paper aims at to solve this p roblem by using the parallel method of IGBTs. Based on
analyzing the IGBTps operating mechanism, this paper also describes the electric circuit and its operating p rincip le. The reasons led to current unbalances of each IGBT in parallel are analyzed, and the corresponding
solutions and the hybrid IC are p roposed. The theory analysis and the results of the circuit simulation show that
the high capacity inverter power with the parallel method of IGBTs is available, in this way it can enlarge the electric current capacity of the whole machine and increase the power of inverter.
KEYWORDS: IGBT; Parallel; Inverter power; Simulation
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