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低阻ITO玻璃的制造工艺

消耗积分:3 | 格式:rar | 大小:281 | 2009-05-23

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有机发光显示器件是目前平板显示中的热点,所用ITO玻璃比液晶显示所用的有更高更严的要求。该文探讨了OLED用ITO玻璃生产的相关工艺,得出使用直流溅射ITO陶瓷靶时,较好的气氛是低氩微氧,功率约200 W左右,溅射时基板温度约250℃,高温无氧退火。得到方阻20 Ω以下、平均透过率大于80%的ITO玻璃。

Low resistivity Indium Tin Oxide (ITO) films were deposited by DC magnetron sputtering using ITO targets. Films deposited at substrate temperature of 250℃ with 200 W input DC power, in an oxygen/argon atmosphere, argon flow was kept at about 16 sccm and the oxygen flow was less than 1sccm, respectively. Annealing of the ITO films without oxygen for 1 h was necessary for achieving low resistivities. Low resistivity (<20 Ω) and high transmittance (>80%) in visible region were found to occur at a high annealing temperature about 350℃.

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