Abstract 2
1 Introduction 3
1.1 Motivation . . . 3
1.1.1 Scope of theWork 5
1.2 State of the Art 6
1.2.1 Broadband Amplifiers . 6
1.2.2 Devices 7
2 InP-based Double Heterojunction Bipolar Transistor 11
2.1 Operating Principle . . . 12
2.2 Technology . . 16
2.2.1 Active Devices . 16
2.2.2 Passive Structures 18
2.3 Layer Structure Optimization . 19
2.3.1 Initial Layer Structure (A) . . . . 19
2.3.2 Improved Layer Structure (B) . . 24
2.3.3 Optimized Layer Structure (C) . 28
2.3.4 Summary . . . . 33
2.4 Transistor Layout Optimization 34
2.4.1 EmitterWidth Design . 36
2.4.2 Base ContactWidth Design . . . 38
2.4.3 Collector Contact Design 40
2.4.4 Emitter Length Design . 40
2.4.5 Summary . . . . 43
3 Transistor Models 45
3.1 Large-SignalModels . . 46
3.1.1 Gummel-PoonModel . . 46
3.1.2 AlternativeModels 47
3.1.3 UCSDModel . . 47
3.2 UCSDModel Extraction 49
3.2.1 Diode Parameters 49
3.2.2 Resistances . . . 51
3.2.3 Junction Capacitances . 55
3.2.4 Transit and Delay Times 56
3.3 Small-SignalModel . . . 60
3.3.1 Model Extraction 60
3.3.2 Investigation of Transistors . . . . 63
3.4 Summary . . . 68
4 Methods of Broadband Amplifier Characterization 69
4.1 Figures ofMerit 69
4.1.1 Bandwidth . . . . 69
4.1.2 Group Delay . . . 71
4.1.3 Output Power . . 71
4.2 Small-Signal-Characterization (S-Parameter) . . . 72
4.3 Large-Signal-Characterization . 73
4.3.1 Output Power . . 73
4.3.2 Signal Distortion (Eye-Diagram) . 74
5 Realization of Compact Lumped Amplifiers 77
5.1 Design Considerations . 77
5.2 Realized Amplifiers . . . 79
5.2.1 Comparison of Lumped Amplifier Approaches . . 79
5.2.2 High-Gain Amplifier for 40 Gbit/s 82
5.2.3 Low-Power Amplifier for 80 Gbit/s . . . . 85
5.3 Output Power Limit . . 87
6 Distributed Amplifiers for 80 Gbit/s 91
6.1 Design Considerations . 92
6.1.1 Gain Cell Design Concepts . . . . 93
6.1.2 Attenuation Compensation . . . . 93
6.1.3 Coplanar and Microstrip Transmission Lines 96
6.1.4 Transmission Line Termination . 97
6.1.5 Linear andMatrix Design . . . . 98
6.1.6 Single-ended and Differential Design . . . 98
6.2 Realized Amplifiers . . . 99
6.2.1 Low-Power 100 GHz Bandwidth Amplifier 99
6.2.2 Tunable Amplifier for Loss Compensation 103
6.2.3 High-Power Amplifier for 80 Gbit/s . . . . 108
6.3 Summary . . . 114
7 Conclusion and Outlook 115
A Extracted Large-Signal Model Parameters 117
Bibliography 119
List of Abbreviations 129
Acknowledgments 131
Curriculum Vitae 132
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