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LM5111,pdf datasheet (Dual 5A
消耗积分:3 |
格式:rar |
大小:554 |
2009-10-06
杨平
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The LM5111 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and efficiency.
Each “compound” output driver stage includes MOS and bipolar
transistors operating in parallel that together sink more
than 5A peak from capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces drive current
variation with voltage and temperature. Under-voltage
lockout protection is also provided. The drivers can be operated
in parallel with inputs and outputs connected to double
the drive current capability. This device is available in the
SOIC-8 package or the thermally enhanced MSOP8-EP
package.
gate drivers with improved peak output current and efficiency.
Each “compound” output driver stage includes MOS and bipolar
transistors operating in parallel that together sink more
than 5A peak from capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces drive current
variation with voltage and temperature. Under-voltage
lockout protection is also provided. The drivers can be operated
in parallel with inputs and outputs connected to double
the drive current capability. This device is available in the
SOIC-8 package or the thermally enhanced MSOP8-EP
package.
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