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128K×16位低功耗CMOS SRAM，AS6C2016

消耗积分:0 | 格式:rar | 大小:0.49 MB | 2017-09-20

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　　The AS6C2016 is a 2，097，152-bit low power CMOS static random access memory organized as 131，072 words by 16 bits. It is fabricated using very high performance， high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C2016 is well designed for low power application， and particularly well suited for battery back-up nonvolatile memory application. The AS6C2016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible
128K×16位低功耗CMOS SRAM，AS6C2016

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