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电流模式带有分段非线性校正带隙参考

消耗积分:0 | 格式:rar | 大小:0.08 MB | 2017-10-17

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  A low voltage, micro-power, curvature-corrected bandgap reference is presented that is capable of

  working down to input voltages of 1.1 V in a relatively inexpensive process, MOSIS 2 mm technology. This is

  a vanilla N-well CMOS process technology with an added P-base layer. Second order curvature correction

  for this reference is accomplished by a versatile piecewise-linear current-mode technique. The 0.595 V

  precision reference achieved a line regulation performance of 408 ppm/V for input voltages between 1.2 and 10

  V. The circuit only used 14 mA of quiescent current flo

电流模式带有分段非线性校正带隙参考

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lvcs520 2018-10-31
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