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Evaluation of Hot Carrier Indu

消耗积分:2 | 格式:rar | 大小:98 | 2010-07-09

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Introduction
As device geometry scales down, reli-
ability problems of semiconductor
devices are increasing. The evaluation
of hot carrier induced degradation
becomes very important for develop-
ing reliable ULSI. This application
note introduces you to Agilent’s new
solution for evaluation of hot carrier
induced degradation of multiple
MOSFET devices.

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