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TS5A23159,pdf(1-Ohm Dual SPDT

消耗积分:3 | 格式:rar | 大小:697 | 2010-08-14

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特性

  • Isolation in Power-Down Mode, V+ = 0
  • Specified Break-Before-Make Switching
  • Low ON-State Resistance (1 )
  • Control Inputs Are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Applications
    • Cell Phones
    • PDAs
    • Portable Instrumentation
    • Audio and Video Signal Routing
    • Low-Voltage Data-Acquisition Systems
    • Communication Circuits
    • Modems

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