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压痕诱发GaAs单晶的塑性变形

消耗积分:3 | 格式:rar | 大小:479 | 2009-03-10

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利用透射电子显微镜对压痕诱发GaAs中的塑性变形结构进行了研究。结果表明，压痕周围产生了由长臂位错和短臂位错组成的非均匀分布的玫瑰型位错组态和二次对称分布的孪晶结构。利用电子衍射技术对位错类型进行了分析。结果表明位错形态与Fran-Read位错的形核、运动和相互作用有关，而孪生过程与形变过程中扩展位错的产生与运动密切相关。
关 键 词 GaAs单晶; 压痕; 位错与孪晶; 电子显微镜

Deformation structure induced by indentation in GaAs single crystal has been studied using transmission electron microscopy. The result shows that resettle-like asymmetric dislocations, which consist of elongated-arm dislocations and short-arm ones, and twofold symmetrical twins occurres around indentation. The dislocation configuration formed by the nucleation, movement and interaction of the Frank-Read sources on six slipping planes of the GaAs crystal, and is closely related to the various mobility of the α and β dislocations in GaAs crystal. The formation of the twins is closely related to the stacking_faults.
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