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采用S-FET技术的100V MOS晶体管的介绍及应用说明

消耗积分:5 | 格式:rar | 大小:333 | 2009-05-12

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Thanks to versions in the SO-8, SOT-
223, DPAK and TO-220 packages,
this technology has now become
well established on a global scale.
This series was followed by
20V/30V products for low-voltage
applications. A transistor in a TO-
220 package allows a switch to be
implemented with a resistance of
less than 6 mW for switching currents
up to 80 A.
Thanks to the continuous development
of the S-FET technology, transistors
for 24V and 48V applications
are now available with a breakdown
voltage of 100 V (Fig. 1).

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