The L497XA series of high current switching regulator ICs exploit Multipower-BCD technology to achieve very high output currents with low power dissipation – up to 10A in the Multiwatt power package and 3.5A in a DIP package .
The technology architecture is based on the vertical
DMOS silicon gate process that allows a channel length of 1.5 micron ; using a junction isolation technique it has been possible to mix on the same chip Bipolar and CMOS transistors along with the DMOS power components (Fig. 2).
声明:本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人,不代表电子发烧友网立场。文章及其配图仅供工程师学习之用,如有内容侵权或者其他违规问题,请联系本站处理。 举报投诉
全部0条评论
快来发表一下你的评论吧 !