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锰铜精密电阻薄膜的制备工艺研究
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2009-06-27
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采用溅射技术, 对薄膜沉积的相关工艺参数进行了优化, 获得了电阻温度系数TCR≤±10×10- 6ö℃的锰铜薄膜。该项技术为锰铜传感器的薄膜化奠定了基础, 同时也可用于制作锰铜薄膜精密电阻器。
关键词 锰铜 薄膜 电阻温度系数 溅射
Abstract M anganin th in film s were p repared by sput tering. The TCR s of the film s were decreased to 10× 10- 6ö℃ using op t im ized depo sit ion parameters. Th is technique can be app lied to manganin th in film gauges and th in film p recision resisto rs.
Key words M anganin Th in film Temperature coefficient of resistance Sput tering
关键词 锰铜 薄膜 电阻温度系数 溅射
Abstract M anganin th in film s were p repared by sput tering. The TCR s of the film s were decreased to 10× 10- 6ö℃ using op t im ized depo sit ion parameters. Th is technique can be app lied to manganin th in film gauges and th in film p recision resisto rs.
Key words M anganin Th in film Temperature coefficient of resistance Sput tering
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