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与drganplus简化设计
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2017-05-12
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与drganplus简化设计
本文将针对伊根FET模块作为功率转换系统设计者很容易地评估氮化镓晶体管的特殊性能的途径。
简化设计
电源转换器不断朝着更高的输出功率，更高的效率，更高的功率密度，更高的温度操作，更高的可靠性，同时提供了一个简单的解决方案的设计师。的drganplus，图1所示，显示了伊根FET的高功率密度的能力在一个易于使用的积木。占地面积占用更少的房地产比美国便士，优化半桥设计开发的11毫米×12毫米的四层印刷电路板（PCB）与安装垫允许连接到任何现有的转换器。
The block diagram of the half-bridge circuit design， shown in Figure 2， consists of two eGaN FETs， a driver integrated circuit （IC）， pulse width modulation （PWM） logic， dead-time adjust， and high-frequency input capacitors. The design and layout of these components is critical to fully utilize the high-speed capability of the eGaN FET technology. The DrGaNPLUS gate-drive circuitry ensures the gate-drive requirements for eGaN FETs are met and provides optimized performance with the latest GaN driver IC technology. Users can input two PWM signals to individually control the devices or use the on board logic and dead-time adjust circuit to input a single PWM signal and obtain an optimized dead-time for a buck converter application to maximize performance. The high-frequency input capacitors， also located on board， are arranged with the two eGaN FETs in an optimized PCB layout， minimizing the common source inductance and the high-frequency power commutation loop inductance to decrease switching losses and voltage overshoot. The DrGaNPLUS eliminates complexity and provides the designer an easy-to-use optimized solution with available pads to mount to the PCB， shown on the right in Figure 1.
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