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IGBT Module Rupture Categoriza
消耗积分:3 |
格式:rar |
大小:344 |
2010-02-19
张燕
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Abstract - The isolated base, plastic molded, power
semiconductor module assembly has been available for
various devices for over twenty years. During this time
the power bipolar junction transistor, the BJT, has given
way to the Insulated Gate Bipolar Junction Transistor,
the IGBT, as the self commutatible device of choice
especially for voltage source inverter topologies. As part
of the power structure design process, careful
consideration should be given to possible power device
failure. Obviously every power structure designer strives
to remain well within the operating limits of the power
device as specified by the IGBT manufacturer. However,
there are component failures either of the power
switching device or of supporting components that result
in one or more IGBT power device failures.
semiconductor module assembly has been available for
various devices for over twenty years. During this time
the power bipolar junction transistor, the BJT, has given
way to the Insulated Gate Bipolar Junction Transistor,
the IGBT, as the self commutatible device of choice
especially for voltage source inverter topologies. As part
of the power structure design process, careful
consideration should be given to possible power device
failure. Obviously every power structure designer strives
to remain well within the operating limits of the power
device as specified by the IGBT manufacturer. However,
there are component failures either of the power
switching device or of supporting components that result
in one or more IGBT power device failures.
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