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Accurate and Efficient C-V Mea
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2010-07-09
vinww特烦恼
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Introduction
For next generation ULSI development,
precise characteristics evaluation of
semiconductors during device devel-
opment, process development, and
circuit design phase is essential. As
well as IV measurement, C-V measure-
ments are very important to determine
the oxide thickness. Other important
parameters such as substrate impurity
concentration can also be calculated
from C-V measurement results.
For next generation ULSI development,
precise characteristics evaluation of
semiconductors during device devel-
opment, process development, and
circuit design phase is essential. As
well as IV measurement, C-V measure-
ments are very important to determine
the oxide thickness. Other important
parameters such as substrate impurity
concentration can also be calculated
from C-V measurement results.
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