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TLP351,datasheet

消耗积分:0 | 格式:pdf | 大小:225 KB | 2012-03-14

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The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
IGBTs.
• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF = 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
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