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WSP8810英文资料下载
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2017-07-28
林小辉
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N+N ESD TSSOP-8 20V7.5A
General Description
The WSP8810 is the highest performance trench N-ch MOSFETs with extreme high cell density ， which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSP8810 meet the RoHS and Green Product requirement with full function reliability approved.
Features
Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
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