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1m×16高速异步CMOS静态RAM与3.3V电源IS61WV102416BLL
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TheISSIIS61WV102416ALL/BLLandIS64WV102416BLL are high-speed， 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI‘s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques， yields high-performance and low power consumption devices. When CE is HIGH （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs， CE and OE. The active LOW Write Enable （WE） controls both writing and reading of the memory. A data byte allows Upper Byte （UB） and Lower Byte （LB） access. The device is packaged in the JEDEC standard 48-pin TSOP Type I and 48-pin Mini BGA （9mm x 11mm）.
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