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IS61WV3216BLL,32K×16高速CMOS静态RAM
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TheISSIIS61/64WV3216BLLisahigh-speed，524，288-bit static RAM organized as 32，768 words by 16 bits. It is fabricated using ISSI‘s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques， yields access times as fast as 12ns （3.3V + 10%） and 15ns （2.5V-3.6V） with low power consumption. When CE is HIGH （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs， CE and OE. The active LOW Write Enable （WE） controls both writing and reading of the memory. A data byte allows Upper Byte （UB） and Lower Byte （LB） access. The IS61/64WV3216BLL is packaged in the JEDEC standard 44-pin TSOP-II， and 48-pin mini BGA （6mm x 8mm）.
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