资料下载
×
Characterization of Cdv/dt Ind
消耗积分:5 |
格式:rar |
大小:344 |
2009-11-26
分享资料个
Abstract — Good understanding of power loss in a high frequency
synchronous buck converter is important for design optimization
of both power MOSFET and circuit itself. Most of the MOSFET
power losses are relatively easy to quantify. The exception is the
power loss associated with Cdv/dt induced turn on of the low-side
MOSFET (synchronous rectifier). This paper characterizes the
Cdv/dt induced power loss in two ways. First, detailed device
characterization, in-circuit testing, and modeling are used for a
comparative loss calculation. This method requires specialized
test equipment and is rather complicated and time consuming. A
simple method is then introduced to very accurately quantify the
Cdv/dt loss. With this method, the impacts of the Cdv/dt power
loss on synchronous buck converters at different operation
conditions can be readily assessed. The impacts of Cdv/dt
induced turn on different applications are addressed.
synchronous buck converter is important for design optimization
of both power MOSFET and circuit itself. Most of the MOSFET
power losses are relatively easy to quantify. The exception is the
power loss associated with Cdv/dt induced turn on of the low-side
MOSFET (synchronous rectifier). This paper characterizes the
Cdv/dt induced power loss in two ways. First, detailed device
characterization, in-circuit testing, and modeling are used for a
comparative loss calculation. This method requires specialized
test equipment and is rather complicated and time consuming. A
simple method is then introduced to very accurately quantify the
Cdv/dt loss. With this method, the impacts of the Cdv/dt power
loss on synchronous buck converters at different operation
conditions can be readily assessed. The impacts of Cdv/dt
induced turn on different applications are addressed.
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
