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SOT-23塑料封装晶体管S8550
消耗积分:1 |
格式:rar |
大小:0.6 MB |
2017-12-07
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| SOT-23 | ||
| S8550 TRANSISTOR (PNP) | ||
| FEATURES | 1. BASE | |
| z | Complimentary to S8050 | 2. EMITTER |
| z | Collector current: IC=0.5A | 3. COLLECTOR |
MARKING : 2TY
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
| Symbol | Parameter | Value | Unit | |
| VCBO | Collector-Base Voltage | -40 | V | |
| VCEO | Collector-Emitter Voltage | -25 | V | |
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current -Continuous | -0.5 | A | |
| PC | Collector Power Dissipation | 0.3 | W | |
| Tj | Junction Temperature | 150 | ℃ | |
| Tstg | Storage Temperature | -55-150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Max | Unit | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC = -100μA, IE=0 | -40 | V | |||||
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1mA, IB=0 | -25 | V | |||||
| Emitter-base breakdown voltage | V(BR)EBO | IE= -100μA, IC=0 | -5 | V | |||||
| Collector cut-off current | ICBO | VCB= -40V, IE=0 | -0.1 | μA | |||||
| Collector cut-off current | ICEO | VCE= -20V, IB=0 | -0.1 | μA | |||||
| Emitter cut-off current | IEBO | VEB= -3V, IC=0 | -0.1 | μA | |||||
| hFE(1) | VCE= -1V, IC= -50mA | 120 | 400 | ||||||
| DC current gain | |||||||||
| hFE(2) | VCE= -1V, IC= -500mA | 50 | |||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA, IB= -50mA | -0.6 | V | |||||
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA, IB= -50mA | -1.2 | V | |||||
| Transition frequency | fT | VCE= -6V, IC= -20mA | 150 | MHz | |||||
| f=30MHz | |||||||||
| CLASSIFICATION OF hFE(1) | |||||||||
| Rank | L | H | |||||||
| Range | 120-200 | 200-350 | |||||||
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
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