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TPD2EUSB30,TPD4EUSB30,pdf(4-CH
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大小:959 |
2010-08-25
duke刘
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The TPD2EUSB30 and TPD4EUSB30 provide 2 and 4 channel ESD clamp circuits with flow-through pin
mapping for ease of board layout. These devices have been designed to protect sensitive components which are
connected to ultra high-speed data and transmission lines. The TPDxEUSB30 offer protection from stress
caused by ESD (electrostatic discharge). These devices also offer 5 A (8/20 ms) peak pulse current ratings per
IEC 61000-4-5 (lightning) specification.
The monolithic silicon technology allows matching between the differential signal pairs. The differential 0.05-pF
capacitance ensures that the signal distortion due to added ESD clamp remains minimal at high-speed
differential data transmission.
The TPD2EUSB30 and TPD4EUSB30 conform to IEC61000-4-2 (Level 4) ESD protection. The TPD2EUSB30 is
offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (1 mm
× 2.5 mm) package.
The TPD2EUSB30 and TPD4EUSB30 are characterized for operation over ambient air temperature range of
–40°C to 85°C.
mapping for ease of board layout. These devices have been designed to protect sensitive components which are
connected to ultra high-speed data and transmission lines. The TPDxEUSB30 offer protection from stress
caused by ESD (electrostatic discharge). These devices also offer 5 A (8/20 ms) peak pulse current ratings per
IEC 61000-4-5 (lightning) specification.
The monolithic silicon technology allows matching between the differential signal pairs. The differential 0.05-pF
capacitance ensures that the signal distortion due to added ESD clamp remains minimal at high-speed
differential data transmission.
The TPD2EUSB30 and TPD4EUSB30 conform to IEC61000-4-2 (Level 4) ESD protection. The TPD2EUSB30 is
offered in space saving DRT (1 mm × 1 mm) package. The TPD4EUSB30 is offered in space saving DQA (1 mm
× 2.5 mm) package.
The TPD2EUSB30 and TPD4EUSB30 are characterized for operation over ambient air temperature range of
–40°C to 85°C.
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