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4H-SiC离子注入层的欧姆接触的制备
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用氮离子注入的方法制备了4H-SiC欧姆接触层。注入层的离子浓度分布由蒙特卡罗分析软件 TRIM模拟提取，Si面4H-SiC-Ni/Cr合金欧姆接触的特性由传输线方法结构进行了测量，得到氮离子注入层的方块电阻Rsh为30 kΩ/square, Ni/Cr合金与离子注入层的欧姆接触电阻ρc为7.1×10−4 Ωcm2。
关 键 词 SiC; 离子注入; 欧姆接触; 方块电阻
Abstract Doping by nitrogen ion-implantation is used to fabricate the Ohmic contacts of 4H-SiC. The implantation depth profile is simulated with the Monte Carlo simulator TRIM. Ni/Cr/Si-face 4H-SiC Ohmic contacts are measured by transfer length method structures. The result for sheet resistance Rsh of the implanted layers is 30 kΩ/square. The specific contact resistances ρc of Ohmic contacts is 7.1×10−4 Ωcm2.
Key words silicon carbide; ion implantation; Ohmic contact; sheet resistance
Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation
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