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WSD1216DN22 P DFN2X2-6L -12V -9.
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2017-07-28
林小辉
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WSD1216DN22 P DFN2X2-6L -12V -9.4A
General Description
The WSD1216DN22 is the highest performance trench P-ch MOSFETs with extreme high cell density ， which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WSD1216DN22 meet the RoHS and Green Product requirement with full function reliability approved.
Features
Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
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