资料下载
电池电压并行EEPROM页写和软件数据保护at28bv64b
分享资料个
The Atmel® AT28BV64B is a high-performance electrically erasable programmable read only-memory （EEPROM）。 Its 64K of memory is organized as 8，192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology， the device offers access times to 200ns with power dissipation of just 54 mW. When the device is deselected， the CMOS standby current is less than 20µA. The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle， the addresses and 1 to 64 bytes of data are internally latched， freeing the address and data bus for other operations. Following the initiation of a write cycle， the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s AT28BV64B has additional features to ensure high quality and manufacturability. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
- 相关下载
- 相关文章
