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128K×8低电压超低功耗CMOS静态存储器IS62WV1288DALL/DBLL
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TheISSIIS62/65WV1288DALLandIS62/65WV1288DBLL are high-speed， 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI‘s highperformanceCMOStechnology.Thishighlyreliableprocess coupled with innovative circuit design techniques， yields high-performance and low power consumption devices. When CS1 is HIGH （deselected） or when CS2 is low （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable （WE） controls both writing and reading of the memory. TheIS62/65WV1288DALLandIS62/65WV1288DBLLare packaged in the JEDEC standard 32-pin TSOP （TYPEI）， sTSOP （TYPEI）， SOP， and 36-pin mini BGA.
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