| S8050 TRANSISTOR (NPN) | SOT-23 | |
| FEATURES | ||
| z | Complimentary to S8550 | 1. BASE |
| z | Collector Current: IC=0.5A | 2. EMITTER |
| MARKING: J3Y | 3. COLLECTOR | |
| Symbol | Parameter | Value | Unit | |
| VCBO | Collector-Base Voltage | 40 | V | |
| VCEO | Collector-Emitter Voltage | 25 | V | |
| VEBO | Emitter-Base Voltage | 5 | V | |
| IC | Collector Current -Continuous | 0.5 | A | |
| PC | Collector Dissipation | 0.3 | W | |
| RΘJA | Thermal Resistance from Junction to Ambient | 417 | ℃/W | |
| Tj | Junction Temperature | 150 | ℃ | |
| Tstg | Storage Temperature | -55-150 | ℃ |
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit | ||||
| Collector-base breakdown voltage | V(BR)CBO | IC= 100μA, IE=0 | 40 | V | ||||||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||||||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100μA, IC=0 | 5 | V | ||||||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | μA | ||||||
| Collector cut-off current | ICEO | VCB=20V , I E=0 | 0.1 | μA | ||||||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | μA | ||||||
| hFE(1) | VCE=1V, I C= 50mA | 120 | 400 | |||||||
| DC current gain | ||||||||||
| hFE(2) | VCE=1V, I C= 500mA | 50 | ||||||||
| Collector-emitter saturation voltage | VCE(sat) | I=500 mA, IB= 50mA | 0.6 | V | ||||||
| Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||||||
| Transition frequency | fT | VCE=6V, I C= 20mA | 150 | MHz | ||||||
| f=30MHz | ||||||||||
| CLASSIFICATION OF hFE(1) | ||||||||||
| Rank | L | H | J | |||||||
| Range | 120-200 | 200-350 | 300-400 | |||||||

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