S8050 TRANSISTOR (NPN) | SOT-23 | |
FEATURES | ||
z | Complimentary to S8550 | 1. BASE |
z | Collector Current: IC=0.5A | 2. EMITTER |
MARKING: J3Y | 3. COLLECTOR | |
Symbol | Parameter | Value | Unit | |
VCBO | Collector-Base Voltage | 40 | V | |
VCEO | Collector-Emitter Voltage | 25 | V | |
VEBO | Emitter-Base Voltage | 5 | V | |
IC | Collector Current -Continuous | 0.5 | A | |
PC | Collector Dissipation | 0.3 | W | |
RΘJA | Thermal Resistance from Junction to Ambient | 417 | ℃/W | |
Tj | Junction Temperature | 150 | ℃ | |
Tstg | Storage Temperature | -55-150 | ℃ |
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit | ||||
Collector-base breakdown voltage | V(BR)CBO | IC= 100μA, IE=0 | 40 | V | ||||||
Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||||||
Emitter-base breakdown voltage | V(BR)EBO | IE=100μA, IC=0 | 5 | V | ||||||
Collector cut-off current | ICBO | VCB=40 V , IE=0 | 0.1 | μA | ||||||
Collector cut-off current | ICEO | VCB=20V , I E=0 | 0.1 | μA | ||||||
Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | μA | ||||||
hFE(1) | VCE=1V, I C= 50mA | 120 | 400 | |||||||
DC current gain | ||||||||||
hFE(2) | VCE=1V, I C= 500mA | 50 | ||||||||
Collector-emitter saturation voltage | VCE(sat) | I=500 mA, IB= 50mA | 0.6 | V | ||||||
Base-emitter saturation voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | V | ||||||
Transition frequency | fT | VCE=6V, I C= 20mA | 150 | MHz | ||||||
f=30MHz | ||||||||||
CLASSIFICATION OF hFE(1) | ||||||||||
Rank | L | H | J | |||||||
Range | 120-200 | 200-350 | 300-400 |
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