资料下载
×
关于镍薄膜热电阻研制的几个问题
消耗积分:5 |
格式:rar |
大小:250 |
2009-07-09
李丽
分享资料个
就镍薄膜热电阻研制过程中的选材、工艺、稳定性等问题进行了探讨, 实验结果表明: 可以选用国产0 号镍, 采用S2枪磁控溅射技术制备镍薄膜热电阻; 合适的热处理工艺是保证电阻温度系数A值及其一致性的关键; 运用保护膜技术可以提高镍薄膜热电阻温度传感器的长期稳定性L
关键词: 镍薄膜; 热电阻; 温度传感器
Abstract: D iscu ssed som e key aspect s such as m aterial select ion, p reparat ion m ethod, and stab ility imp rovem en t in develop ing N ick le2f ilm therm al resistance. The resu lt s show that 0# N ick le can be u sed as candidate m aterial fo r develop ing N ick le2f ilm therm al resistance and S2gun m agnet ron spu t tering the app rop riate p reparat ion m ethod. App lying heat t reatm en t and addit ional u lt rath in o rgano silicon f ilm s depo sit ion can keep temperatu re coeff icien t Aat certain h igh value and un ifo rm , thu s further imp rove long2
term stab ility.
Key words: n ick le2f ilm; therm al resistance; temperatu re t ran sm it ter
关键词: 镍薄膜; 热电阻; 温度传感器
Abstract: D iscu ssed som e key aspect s such as m aterial select ion, p reparat ion m ethod, and stab ility imp rovem en t in develop ing N ick le2f ilm therm al resistance. The resu lt s show that 0# N ick le can be u sed as candidate m aterial fo r develop ing N ick le2f ilm therm al resistance and S2gun m agnet ron spu t tering the app rop riate p reparat ion m ethod. App lying heat t reatm en t and addit ional u lt rath in o rgano silicon f ilm s depo sit ion can keep temperatu re coeff icien t Aat certain h igh value and un ifo rm , thu s further imp rove long2
term stab ility.
Key words: n ick le2f ilm; therm al resistance; temperatu re t ran sm it ter
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
