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TS3A24159,pdf(0.3-Ohm Dual SPD
消耗积分:3 |
格式:rar |
大小:795 |
2010-08-14
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1FEATURES
2• Specified Break-Before-Make Switching
• Low ON-State Resistance (0.3 Ω Max)
• Low Charge Injection
• Excellent ON-State Resistance Matching
• Low Total Harmonic Distortion (THD)
• 1.65-V to 3.6-V Single-Supply Operation
• Control Inputs Are 1.8-V Logic Compatible
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
2• Specified Break-Before-Make Switching
• Low ON-State Resistance (0.3 Ω Max)
• Low Charge Injection
• Excellent ON-State Resistance Matching
• Low Total Harmonic Distortion (THD)
• 1.65-V to 3.6-V Single-Supply Operation
• Control Inputs Are 1.8-V Logic Compatible
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
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