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纳米光刻方法
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2011-09-06
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Direct write e-beam lithography:
- based on scanning electron microscope (SEM)
- small scanning Gaussian electron spot (diameter 1-5 nm) exposes resist
- maximum scanning range 100 - 1000 μm due to aberrations and distortions
- mechanical movement of sample (interferometric position measurement) in
combination with e-beam scanning to cover large sample size (stitching)
- magnetic lenses for electron optics:
- e-beam is scanned by deflectors
(either electrostatic or magnetic)
- one deflector is used to blank
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