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512K×32高速异步CMOS静态RAM与3.3V电源IS61WV51232ALL/ALS
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TheISSI IS61WV51232Axx/Bxx and IS64WV51232Bxx are high-speed， 16M-bit static RAMs organized as 512K words by 32 bits. It is fabricated using ISSI‘s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques， yields highperformance and low power consumption devices. When CE is HIGH （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs， CE and OE. The active LOW Write Enable （WE） controls both writing and reading of the memory. The device is packaged in the JEDEC standard 90-ball BGA （8mm x 13mm）.
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