×

全英版NDS351A资料

消耗积分:1 | 格式:pdf | 大小:78KB | 2014-08-08

strugerli

分享资料个

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology。This very high density process is especially tailored to minimize on-state resistance。These devices are particularly suited for low voltage applications in notebook computers,portable phones, PCMCIA cards,and other battery powered circuits where fast  switching,and low in-line power loss are needed in a very small outline surface mount package。

声明:本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人,不代表电子发烧友网立场。文章及其配图仅供工程师学习之用,如有内容侵权或者其他违规问题,请联系本站处理。 举报投诉

评论(0)
发评论

下载排行榜

全部0条评论

快来发表一下你的评论吧 !