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1兆位的低电压at28lv010并行EEPROM分页
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The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Programmable Read-Only Memory. Its 1 megabit of memory is organized as 131，072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology， the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected， the CMOS standby current is less than 20 µA. The AT28LV010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle， the address and 1 to 128 bytes of data are internally latched， freeing the address and data bus for other operations. Following the initiation of a write cycle， the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s 28LV010 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. Software data protection is implemented to guard against inadvertent writes. The device also includes an extra 128 bytes of EEPROM for device identification or tracking.
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