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2N5116 pdf datasheet
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格式:rar |
大小:444 |
2008-07-09
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FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE 75Ω
LOW CAPACITANCE 6pF
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
Linear Integrated Systems
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE 75Ω
LOW CAPACITANCE 6pF
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to 200°C
Junction Operating Temperature -55 to 200°C
Maximum Power Dissipation
Continuous Power Dissipation 500mW
Maximum Currents
Gate Current -50mA
Maximum Voltages
Gate to Drain 30V
Gate to Source 30V
Linear Integrated Systems
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