资料下载
×
LM5110,pdf datasheet (Dual 5A
消耗积分:3 |
格式:rar |
大小:555 |
2009-10-06
王越建
分享资料个
The LM5110 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and efficiency.
Each “compound” output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Separate
input and output ground pins provide Negative Drive
Capability allowing the user to drive MOSFET gates with
positive and negative VGS voltages. The gate driver control
inputs are referenced to a dedicated input ground (IN_REF).
The gate driver outputs swing from VCC to the output ground
VEE which can be negative with respect to IN_REF. The
ability to hold MOSFET gates off with a negative VGS voltage
reduces losses when driving low threshold voltage
MOSFETs often used as synchronous rectifiers. When driving
with conventional positive only gate voltage, the IN_REF
and VEE pins are connected together and referenced to a
common ground. Under-voltage lockout protection and a
shutdown input pin are also provided. The drivers can be
operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 and the thermally-enhanced LLP-10 packages.
gate drivers with improved peak output current and efficiency.
Each “compound” output driver stage includes MOS
and bipolar transistors operating in parallel that together sink
more than 5A peak from capacitive loads. Combining the
unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Separate
input and output ground pins provide Negative Drive
Capability allowing the user to drive MOSFET gates with
positive and negative VGS voltages. The gate driver control
inputs are referenced to a dedicated input ground (IN_REF).
The gate driver outputs swing from VCC to the output ground
VEE which can be negative with respect to IN_REF. The
ability to hold MOSFET gates off with a negative VGS voltage
reduces losses when driving low threshold voltage
MOSFETs often used as synchronous rectifiers. When driving
with conventional positive only gate voltage, the IN_REF
and VEE pins are connected together and referenced to a
common ground. Under-voltage lockout protection and a
shutdown input pin are also provided. The drivers can be
operated in parallel with inputs and outputs connected to
double the drive current capability. This device is available in
the SOIC-8 and the thermally-enhanced LLP-10 packages.
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
