资料下载
×
TI_对于tps7h3301-sp电排序应用外部软启动电路
消耗积分:1 |
格式:rar |
大小:177 KB |
2016-11-28
zcd
分享资料个
The TPS7H3301-SP is a radiation-hardened, Double Data Rate (DDR) memory, 3-A termination regulator with a built-in VTTREF buffer. The TPS7H3301-SP has an enable pin (EN) that, in DDR1 and DDR2 applications, might be connected to the reference input voltage of the device (VDDQSNS). However, in certain applications, the enable pin might be driven independently. If that is the case and the DDR memory is in a S0 or S3 state (VDDQSNS present), there is a possibility of a large inrush current (up to 8 A maximum for sourcing current limit) when the enable pin goes high. This current demand will be seen by the upstream source for VLDOIN and could potentially create problems. This application note is intended to provide an external soft-start circuit to avoid inrush current in these situations.
声明：本文内容及配图由入驻作者撰写或者入驻合作网站授权转载。文章观点仅代表作者本人，不代表电子发烧友网立场。文章及其配图仅供工程师学习之用，如有内容侵权或者其他违规问题，请联系本站处理。 举报投诉
评论(0)
发评论
- 相关下载
- 相关文章
