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2N3740 pdf datasheet
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大小:433 |
2008-07-08
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APPLICATIONS:
· Drivers
· Switches
· Medium-Power Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered data.
FEATURES:
· Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
· High Gain Characteristics: hFE @ IC = 250 mA: 30-100
· Excellent Safe Area Limits
· Complementary to NPN 2N3766 (2N3740)
· Drivers
· Switches
· Medium-Power Amplifiers
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
* Indicates JEDEC registered data.
FEATURES:
· Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp
· High Gain Characteristics: hFE @ IC = 250 mA: 30-100
· Excellent Safe Area Limits
· Complementary to NPN 2N3766 (2N3740)
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