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IRF3205 HEXFET Power MOSFET
消耗积分:10 |
格式:rar |
大小:225 |
2009-12-05
刘满贵
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Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
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liu547515736
2014-08-25
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