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Evaluation of Gate Oxides Usin
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2010-07-15
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Introduction
Capacitance versus voltage (CV) char-
acteristics measured with the Quasi-
Static CV (QSCV) method are impor-
tant for device characterization. High-
frequency CV (HFCV) curves do not
yield knowledge about MOS oxide
behavior in the important inversion
regime; only QSCV curves can reveal
this information. Thus, QSCV measure-
ments are critical for the analysis of
modern thin-oxide MOS processes.
Capacitance versus voltage (CV) char-
acteristics measured with the Quasi-
Static CV (QSCV) method are impor-
tant for device characterization. High-
frequency CV (HFCV) curves do not
yield knowledge about MOS oxide
behavior in the important inversion
regime; only QSCV curves can reveal
this information. Thus, QSCV measure-
ments are critical for the analysis of
modern thin-oxide MOS processes.
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