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WSD20L75DN P DFN3.3X3.3EP -20V
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2017-07-28
林小辉
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WSD20L75DN P DFN3.3X3.3EP -20V -50A
General Description
Description The WSD20L75DN uses advanced trench technology and design to provide excellent RDS（ON） with low gate charge. It can be used in a wide variety of applications.
Features
High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
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