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TS3USB30E,pdf(ESD PROTECTED, H
消耗积分:5 |
格式:rar |
大小:897 |
2010-08-22
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1FEATURES
• VCC Operation at 3 V to 4.3 V
• 1.8-V Compatible Control-Pin Inputs
• IOFF Supports Partial Power-Down-Mode
Operation
– D+/D– Pins Tolerate up to 5.25V
• rON = 10 Ω Max
• ΔrON = 0.35 Ω Typ
• Cio(ON) = 7.5 pF Typ
• Low Power Consumption (1 mA Max)
• –3 dB Bandwidth = 900 MHz Typ
• Latch-Up Performance Exceeds
100 mA Per JESD 78, Class II
(1)
• ESD Performance Tested Per JESD 22
– 8000-V Human-Body Model (A114-B,
Class II)
– 1000-V Charged-Device Model (C101)
• ESD Performance I/O Port to GND (2)
– 15000-V Human-Body Model
• Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)
• VCC Operation at 3 V to 4.3 V
• 1.8-V Compatible Control-Pin Inputs
• IOFF Supports Partial Power-Down-Mode
Operation
– D+/D– Pins Tolerate up to 5.25V
• rON = 10 Ω Max
• ΔrON = 0.35 Ω Typ
• Cio(ON) = 7.5 pF Typ
• Low Power Consumption (1 mA Max)
• –3 dB Bandwidth = 900 MHz Typ
• Latch-Up Performance Exceeds
100 mA Per JESD 78, Class II
(1)
• ESD Performance Tested Per JESD 22
– 8000-V Human-Body Model (A114-B,
Class II)
– 1000-V Charged-Device Model (C101)
• ESD Performance I/O Port to GND (2)
– 15000-V Human-Body Model
• Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)
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